-
GaAs solar power generation principle
GaAs-based thin films are epitaxially grown on top of MOCVD-grown graphene coated AlGaAs/GaAs substrate with a sacrificial buffer layer, which enables epitaxial lift-off of the solar cell. . The III-V compound solar cells represented by GaAs solar cells have contributed as space and concentrator solar cells and are important as sub-cells for multi-junction solar cells. This chapter reviews progress in III-V compound single-junction solar cells such as GaAs, InP, AlGaAs and InGaP cells. Silicon material is a kind of semiconductor material.
[PDF Version]